Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate
نویسندگان
چکیده
In this study, we investigated the impact of intrinsic output conductance (goi) on short-circuit current-gain cut-off frequency (fT) in InxGa1-xAs/In0.52Al0.48As quantum-well (QW) high-electron-mobility transistors. At its core, attempted to extract values fT using a simplified small-signal model (SSM) HEMTs and derive an analytical formula for terms extrinsic parameters that are related with general SSM. We projected how was influenced by goi HEMTs, emphasizing improvement electrostatic integrity would also be critical importance fully benefit from scaling down Lg.
منابع مشابه
Dual-Heterojunction High Electron Mobility Transistors on GaAs Substrate
The high electron mobility transistors (HEMT’s) in general and AlGaAs/GaAs/AlGaAs dualheterojunction high electron mobility transistors (DHHEMT) specifically have been studied in this paper. These devices show superior characteristics over other types of FET’s for high frequency microwave power applications. The structure of a heterojunction have been discussed followed by two and multiple-chan...
متن کاملQuantum-Well Transistors on Silicon Substrate
The direct epitaxial growth of ultrahigh-mobility InGaAs/InAlAs quantum-well (QW) device layers onto silicon substrates using metamorphic buffer layers is demonstrated for the first time. In this letter, 80 nm physical gate length depletionmode InGaAs QW transistors with saturated transconductance gm of 930 μS/μm and fT of 260 GHz at VDS = 0.5 V are achieved on 3.2 μm thick buffers. We expect t...
متن کاملQuantum Confinement in High Electron Mobility Transistors
Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...
متن کاملCryogenic Ultra-Low Noise InP High Electron Mobility Transistors
iii List of publications v Notations and abbreviations vii
متن کاملEffects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors
In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2023
ISSN: ['2079-9292']
DOI: https://doi.org/10.3390/electronics12020259